In recent times, shrinking of transistor and accommodating more and more transistors in the given die area is opening up new ways of realizing the transistor shape and controlling the device. Samsung know for making flagship android devices, introduced new ways of relazing a transistor for 3nm node called as GAAFET (Gate All Around FET) and MBCFET (Multi-Bridge Channel Field Effect Transistor). The 3nm kit launched by Samsung recently is in alpha stage, with this Samsung is planning plethora of process nodes in the coming years, with development tracks planned for 7nm, 6nm, 5nm, 4nm, and yes, 3nm.The 14nm, 10nm, and 7nm nodes have all used FinFETs — vertical “fins” above the formerly 2D channel structure, which increases the contact area between transistor channel and the gate.There are two ways to build this new, gate-all-around (GAA) structure — nanowires and nanosheets. Nanowires are difficult to build but optimal for low-power. Nanosheets are believed to have advantages as far as performance and scaling are concerned, and Samsung will use this approach for its 3nm node. It’s calling this design an MBCFET, which stands for Multi-Bridge Channel Field Effect Transistor. This what samsung had to say,"Compared to 7nm technology, Samsung’s 3GAE process is designed to provide up to a 45 percent reduction in chip area with 50 percent lower power consumption or 35 percent higher performance". The most logical way to read the slide is “3nm increases performance by 35 percent while reducing power by 50 percent and area by 45 percent compared to 7nm.” The use of commas, without a qualifier, implies that these benefits are being delivered alongside each other, not that two of them are in opposition to each other. This shows how the company expects each of its current design lines to evolve and, somewhat by extension, how it expects its current customers to move. Samsung hasn’t spelled out exactly what the distinction between each of these nodes is, or which paths it expects particular customers to take, but we do know certain aspects of the nodes. 8nm, for example, explicitly doesn’t use EUV, while 7nm does. The company claims to offer “four FinFET-based processes from 7nm down to 4nm that leverage extreme ultraviolet (EUV) technology, as well as 3nm GAA or MBCFET.” This phrasing is somewhat ambiguous and implies that Samsung might offer both GAA (nanowires) and MBCFET (nanosheets).